Speaker
Description
3D integrated silicon devices offer the possibility of heterogeneous integration of LGAD sensors with fast-timing readout electronics in 28nm CMOS, potentially enabling a new generation of monolithic timing detectors using 3D integration. Propelled by industry applications, 3D-integration is becoming a well-established technology at semiconductor foundries, making HEP applications possible. This talk will describe progress made in this direction from a joint SLAC, Fermilab, and LLNL effort to develop LGAD structures compatible with fabrication in commercial 12-inch wafer process that can be cost-effectively 3D integrated with a high-performance readout chip in 28nm CMOS technology, containing a low-power and high precision preamplifier and discriminator, and a 6.25ps low-power TDC.
