Speaker
Ivan Peric
(KIT - Karlsruhe Institute of Technology (DE))
Description
High-voltage CMOS detectors are based on innovative structure where a pixel consists of a single collection electrode with readout electronics placed in it. High-voltage CMOS detectors can be thinned to about 50µm, they have relatively low current consumption and high spatial resolution. Since they are implemented in a commercial CMOS process, the production of large area sensors is inexpensive. The latest pixel detector designs designed for tracking detectors at electron-electron colliders will be presented.
| 1st preferred time slot for your oral presentation | 15:30-17:30 JST (8:30-10:30 CEST, 2:30-4:30 EDT, 23:30-1:30 PDT) |
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| 2nd preferred time slot for your oral presentation | 19:00-21:00 JST (12:00-14:00 CEST, 6:00-8:00 EDT, 3:00-5:00 PDT) |
Primary author
Ivan Peric
(KIT - Karlsruhe Institute of Technology (DE))
